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CSME 2018/10
Volume 39 No.5 : 477-486
 
Theoretical Model for Calculating the Thickness of the Nanoscale Chemical Reaction Layer on Sapphire Substrate for Different Slurry Dipping Durations and Experiments

Zone-Ching Lina, Hao-Yang Dinga and Shih-Hung Maa
aDepartment of Mechanical Engineering, National Taiwan University of Science and Technology, No.43, Keelung Rd., Sec.4, Da'an Dist., Taipei City 10607, Taiwan


Abstract: An innovative theoretical model and experimental method were proposed to calculate nanoscale thickness of the chemical reaction layer of sapphire substrates and analyze the various slurry dipping durations (dipping 5,10,20,30,60,90 min.)affecting the thickness of the chemical reaction layer. It involved applying small down force to cut sapphire substrates dipped in slurry for varying dipping durations it to obtain the SDFE values corresponding to the thickness of chemical reaction layer. The measured SDFE values of performing with a cutting depth interval of 0.05nm were then used to develop a theoretical method for calculating the thickness of the chemical reaction layer of sapphire substrate according to the various dipping durations of dipping slurry. Finally, an AFM nanoscale cutting experiment was conducted with a cutting depth interval of approximately 0.01 nm for each cutting pass to determine the changes in the SDFE values, which were used to measure the thickness of the chemical reaction layer for each slurry dipping time. The results verify that the proposed theoretical method is feasible. Next, it conducted a regression analysis and a regression equation for the thickness of the chemical reaction layer and various dipping durations. The results indicate that at longer slurry dipping duration, the chemical reaction layer thickened; specifically, the chemical reaction layer thickness at dipping duration less than 20 min increased rapidly with the dipping time, but at dipping duration longer than 30 min, the increase was approximately linear.

Keywords:  Specific down force energy, atomic force microscopy, sapphire substrate, thickness of chemical reaction layer.

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*Corresponding author; e-mail: zclin@mail.ntust.edu.tw
© 2018  CSME , ISSN 0257-9731 





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