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CSME 2019/08
Volume 40 No.4
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365-374
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Investigation of Bonding Energy of Morse Potential Energy of Silicon Substrate Dipped in Room Temperature Slurry
Zone-Ching Lina, Chao-Yu Zhanga and Bo-Tang Zhaoa
aDepartment of Mechanical Engineering, National Taiwan University of Science and Technology, No.43, Keelung Rd., Sec.4, Taipei, Taiwan
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Abstract:
The study uses specific down force energy (SDFE) theory and the theoretical model for calculation of the thickness of chemical reaction layer, and then establish the calculation method of bonding energy D value of Morse potential energy of the single-crystal silicon affected by chemical reaction of room-temperature slurry. The study uses a smaller down force and a cutting depth within the range of thickness of chemical reaction layer to calculate the bonding energy D value of Morse potential energy of the single-crystal silicon affected by room-temperature slurry. Finally, the study uses molecular statics nanocutting model and the obtained bonding energy D value of Morse potential energy of the single-crystal silicon affected by room-temperature slurry to simulate the cutting force and down force for cutting of single-crystal silicon substrate, and then compare the simulated cutting force and down force with those under the effects of room-temperature slurry obtained from calculation by SDFE method, so as to prove the acquired bonding energy D value of Morse potential energy affected by room-temperature slurry is reasonable.
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Keywords: specific down force energy (SDFE), atomic force microscopy (AFM), single-crystal silicon substrate, bonding energy of Morse potential energy, room temperature slurry
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*Corresponding author; e-mail: zclin@mail.ntust.edu.tw
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©
2019
CSME , ISSN 0257-9731
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