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CSME 2020/06
Volume 41 No.3
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253-263
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Establishment and Analysis of Calculation Method of Bonding Energy of Morse Potential Energy of The Single-Crystal Silicon Affected by Its Being Dipped in Slurry at Different Temperatures
Zone-Ching Lina and Bo-Tang Zhaoa
aDepartment of Mechanical Engineering, National Taiwan University of Science and Technology, No.43, Keelung Rd., Sec.4, Da'an Dist., Taipei City 10607, Taiwan.
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Abstract:
Considering the affected by the different dipping slurry temperatures of the single-crystal silicon for the bonding energy values of Morse potential energy of single-crystal silicon, the paper uses specific down force energy (SDFE) theory and calculation method of theoretical model for calculation of the thickness of chemical reaction layer to calculate the bonding energy D value of Morse potential energy of the single-crystal silicon dipped in slurry at different temperatures. Then the paper uses molecular statics nanocutting model to simulate the cutting force and down force for cutting of single-crystal silicon, and then makes verification in order to understand the effects of different slurry temperatures on bonding energy. Finally, focusing on a fixed down force and using SDFE theory, the paper calculates the cutting depth of the single-crystal silicon substrate dipped in slurry at different temperatures, and explores the relationship between change of bonding energy for dipping in slurry at different temperatures and the cutting depth.
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Keywords: silicon, atomic force microscopy (AFM), specific down force energy (SDFE), bonding energy of Morse potential energy, thickness of chemical reaction layer, slurry temperature
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*Corresponding author; e-mail: zclin@mail.ntust.edu.tw
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©
2020
CSME , ISSN 0257-9731
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