A Study of the Theoretical Model for Thicknesses of Chemical Reaction Layers of Silicon Wafers Soaked in Slurries of Different Temperatures and Different Volume Concentrations and the Regression Equation of Thickness of Chemical Reaction Layer

CSME 2024/08
Volume 45 No.4 : 319-327

A Study of the Theoretical Model for Thicknesses of Chemical Reaction Layers of Silicon Wafers Soaked in Slurries of Different Temperatures and Different Volume Concentrations and the Regression Equation of Thickness of Chemical Reaction Layer

Zone-Ching Lin^a, Zih-Wun Jhang^b, Yan-Yu Chen^b and Bei-Chen Kuo^b
^aOpto-Mechatronics Technology Center (OMTC), National Taiwan University of Science and Technology, No.43, Keelung Rd., Sec.4, Da'an Dist., Taipei City 10607, Taiwan,
^bDepartment of Mechanical Engineering, National Taiwan University of Science and Technology, No.43, Keelung Rd., Sec.4, Da'an Dist., Taipei City 10607, Taiwan,

Abstract: From the analysis of track lighting patents, the paper develops the concept of obtaining the normalized numerical values of functional word groups in each functional field, and then combines this concept with the modified DEMATEL-based Analytical Network Process (DANP) method and the modified Techniques for Order Preference by Similarity to an Ideal Solution (TOPSIS) method for application to track lighting in order to determine the priority of the functional improvement plans of different LED track lightings. Through exploration of the related literature on LED track lighting products as well as analysis of different patents, this paper has sorted out three product functional improvement plans for LED track lighting products.

Keywords: silicon wafer, thickness of chemical reaction layer, temperature of slurry, volume concentration of slurry, regression equation

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