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CSME 2020/12
Volume 41 No.6
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713-723
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Theoretical Simulation and Regression Analysis for Abrasive Removal Depth of Chemical Mechanical Polishing with Pattern-free Polishing Pad at Different Volume Concentrations of Slurry and Experiment
Zone-Ching Lina and Tzung-Ru Wua
aDepartment of Mechanical Engineering, National Taiwan University of Science and Technology, No.43, Keelung Rd., Sec.4, Da'an Dist., Taipei City 10607, Taiwan
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Abstract:
Considering that the contact area between the asperity peak surface of pattern-free polishing pad and wafer is of Gaussian distribution, the paper dippd silicon wafer in slurry at different volume concentrations at room temperature, and then performs atomic force microscopic (AFM) experiment. The paper calculates the specific down force energy (SDFE) values of silicon wafer dipped in slurry at different volume concentrations at room temperature. Then the paper substitutes these values in an innovatively established theoretical model of abrasive removal depth in chemical mechanical polishing (CMP) by pattern-free polishing pad with slurry at different volume concentrations. Then the paper makes a comparison between the simulation calculated abrasive removal depth value per minute obtained from calculation and the result of average abrasive removal depth per minute obtained from CMP experiment by pattern-free polishing pad. Finally, the calculated result obtained from theoretical simulation is proved to be reasonable. Furthermore, the paper proposes a correction concept for the average difference ratio of the simulation result to the experimental result, making the abrasive removal depth value per minute obtained from simulation after compensatory correction become closer to the experimental result. The paper, giving consideration for slurry at different volume concentrations at room temperature, also establishes a new regression model and a new equation of average abrasive removal depth per minute in CMP by pattern-free polishing pad at different down forces and rotational velocities, and with slurry at different volume concentrations so as to make it close to the experimental result. The paper also completes the compensatory regression equation after adding the effects of slurry at different volume concentrations, and makes analysis.
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Keywords: abrasive removal depth, regression model, volume concentration, pattern-free polishing pad, chemical mechanical polishing (CMP)
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*Corresponding author; e-mail: zclin@mail.ntust.edu.tw
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©
2020
CSME , ISSN 0257-9731
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