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CSME 2024/08
Volume 45 No.4
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319-327
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A Study of the Theoretical Model for Thicknesses of Chemical Reaction Layers of Silicon Wafers Soaked in Slurries of Different Temperatures and Different Volume Concentrations and the Regression Equation of Thickness of Chemical Reaction Layer
Zone-Ching Lina, Zih-Wun Jhangb, Yan-Yu Chenb and Bei-Chen Kuob
aOpto-Mechatronics Technology Center (OMTC), National Taiwan University of Science and Technology, No.43, Keelung Rd., Sec.4, Da'an Dist., Taipei City 10607, Taiwan,
bDepartment of Mechanical Engineering, National Taiwan University of Science and Technology, No.43, Keelung Rd., Sec.4, Da'an Dist., Taipei City 10607, Taiwan,
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Abstract:
This paper explores soaking of silicon wafers in slurries of four different temperatures and five different volume concentrations for 60 minutes, and then uses the probe of atomic force microscope (AFM) to apply a tiny downward force to form cutting depths inside the chemical reaction layers of silicon wafers so as to perform straight-line nanocutting. By substituting the obtained results in the specific downward force (SDFCreaction) equation, the paper obtains the respec tive (SDFCreaction) values in the chemical reaction layers of silicon wafers soaked in slurries of different temperatures and different volume concentrations. The paper establishes an innovative theoretical method for calculation of the thicknesses of the chemical reaction layers of silicon wafers soaked in slurries of different temperatures and different volume concentrations. For this calculation method of the thicknesses of chemical reaction layers, the paper conducts an atomic force microscopic (AFM) cutting experiment with a downward force at a cutting depth interval of 5Å, and observes the stable (SDFCreaction) values within the thicknesses of chemical reaction layers as well as the (SDFCreaction) values exceeding the thicknesses of chemical reaction layers. At the place around the cutting depth with the (SDFCreaction) value starting to increase, the paper conducts an AFM experiment at a cutting interval of 1Å, and observes the change in (SDFCreaction) value. Then the paper obtains the thicknesses of chemical reaction layers soaked in slurries of different temperatures and different volume concentrations, and proves that the thicknesses of the chemical reaction layers obtained by calculation are reasonable. Finally, the paper uses two variables, different temperatures (x) of slurries and different volume concentrations (y) of slurries, to establish an innovative second-order regression equation of the thickness of chemical reaction layer.
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Keywords: silicon wafer, thickness of chemical reaction layer, temperature of slurry, volume concentration of slurry, regression equation
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*Corresponding author; e-mail: zclin@mail.ntust.edu.tw
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©
2024
CSME , ISSN 0257-9731
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