Using Inverse Method to Establish Simulation Calculation Method of Surface Morphology of the Polished Silicon Wafer and Experimental Verification
Zone-Ching Lin a, Yih-Lin Cheng b, Yan-Yu Chen c, Bei-Chen Kuo c and You-Cheng Lin c
aProfessor, Opto-Mechatronics Technology Center (OMTC), National Taiwan University of Science and Technology, No.43, Keelung Rd., Sec.4, Da'an Dist., Taipei City 10607, Taiwan
bProfessor, Department of Mechanical Engineering, National Taiwan University of Science and Technology, No.43, Keelung Rd., Sec.4, Da'an Dist., Taipei City 10607, Taiwan
cGraduated Student, Department of Mechanical Engineering, National Taiwan University of Science and Technology, No.43, Keelung Rd., Sec.4, Da'an Dist., Taipei City 10607, Taiwan
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Abstract:
The paper proposes using the specific downward force energy (SDFEreaction) value of silicon wafer soaked in room-temperature slurry. After CMP machine performs CMP of silicon wafer at room temperature, the paper combines gravimetric method with conjugate foci method of laser scanning confocal microscope (LSCM) to measure the total abrasive removal depths at different positions on the cross-section of silicon wafer surface and the average abrasive removal depth per minute at different positions on the cross- section of silicon wafer surface With the data obtained above, the paper further proposes using the innovative inverse method to calculate the downward force borne by different element positions on the cross-section of silicon wafer surface. Furthermore, the paper employs the downward force at each element position obtained by inverse method to derive the abrasive removal depth per minute at each element position on the axis of the cross-section of silicon wafer surface at different rotational speeds, and can obtain the simulation polished surface morphology of silicon wafer surface. Finally, the paper conducts another experiment with total downward force 3psi and rotational speed 40rpm, makes comparison between the experimental results and simulation results of total abrasive removal depth and surface morphology, so as to prove the rationality of this paper’s theoretical simulation model.
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